Threshold-voltage instability in 4H-SiC MOSFETs with nitrided gate oxide revealed by non-relaxation method-Reference-Cited by-同舟云学术

Threshold-voltage instability in 4H-SiC MOSFETs with nitrided gate oxide revealed by non-relaxation method

Published:2016-03-03 Issue:4S Volume:55 Page:04ER11
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sometani Mitsuru,Okamoto Dai,Harada Shinsuke,Ishimori Hitoshi,Takasu Shinji,Hatakeyama Tetsuo,Takei Manabu,Yonezawa Yoshiyuki,Fukuda Kenji,Okumura Hajime

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=4S/a=04ER11/pdf

Reference26 articles.

1. Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices

2. Material science and device physics in SiC technology for high-voltage power devices

3. Threshold Voltage Instability in 4H-SiC MOSFETs With Phosphorus-Doped and Nitrided Gate Oxides

4. A new two-dimensional TCAD model for threshold instability in silicon carbide MOSFETs

5. Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements

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