Effect of interlayer on silver-induced layer exchange crystallization of amorphous germanium thin film on insulator
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=5S1/a=05DE04/pdf
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1. Low-temperature formation (<500°C) of poly-Ge thin-film transistor with NiGe Schottky source/drain
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3. Impacts of oxygen passivation on poly-crystalline germanium thin film transistor
4. Formation of heavily boron-doped hydrogenated polycrystalline germanium thin films by co-sputtering for developing p+ emitters of bottom cells
5. Low-Temperature, Low-Pressure Chemical Vapor Deposition and Solid Phase Crystallization of Silicon–Germanium Films
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1. Low Energy Ion-Induced Crystallization of Ge in c-Al/a-Ge Bilayer Thin Films at Low Temperatures of ∼125 °C;Crystal Growth & Design;2023-12-04
2. Low temperature formation of high-quality crystalline Ge (1 1 1) by improving Au catalyst crystallinity;Journal of Crystal Growth;2021-10
3. Kinetics and crystal texture improvements on thin germanium layers obtained by aluminium induced crystallization using oxygen plasma;Surface and Coatings Technology;2018-06
4. Silver-induced layer exchange for polycrystalline germanium on a flexible plastic substrate;Journal of Applied Physics;2017-12-06
5. Low-temperature (330 °C) crystallization and dopant activation of Ge thin films via AgSb-induced layer exchange: Operation of an n-channel polycrystalline Ge thin-film transistor;Applied Physics Express;2017-08-24
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