Epitaxial stabilization of pseudomorphic α-Ga2O3on sapphire (0001)-Reference-Cited by-同舟云学术

Epitaxial stabilization of pseudomorphic α-Ga2O3on sapphire (0001)

Published:2014-12-12 Issue:1 Volume:8 Page:011101
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Schewski Robert,Wagner Günter,Baldini Michele,Gogova Daniela,Galazka Zbigniew,Schulz Tobias,Remmele Thilo,Markurt Toni,von Wenckstern Holger,Grundmann Marius,Bierwagen Oliver,Vogt Patrick,Albrecht Martin

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/8/i=1/a=011101/pdf

Reference30 articles.

1. Heteroepitaxy of Corundum-Structured α-Ga2O3Thin Films on α-Al2O3Substrates by Ultrasonic Mist Chemical Vapor Deposition

2. Sol–gel derived phase pure α-Ga2O3 nanocrystalline thin film and its optical properties

3. Electronic Band Structure of Al2O3, with Comparison to Alon and AIN

4. Analogies in the Gallia and Alumina Systems. The Preparation and Properties of Some Low-Alkali Gallates1

5. GROWTH OF α‐Ga2O3 SINGLE CRYSTALS AT 44 KBARS

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