Novel Sn-assisted nitridation of Ge/HfO2interface and improved electrical properties of the MOS capacitor
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference21 articles.
1. Germanium channel MOSFETs: Opportunities and challenges
2. High-k/Ge MOSFETs for future nanoelectronics
3. Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric
4. Hafnium oxide/germanium oxynitride gate stacks on germanium: Capacitance scaling and interface state density
5. Effective Surface Passivation by Novel $\hbox{SiH}_{4}$ –$\hbox{NH}_{3}$ Treatment and BTI Characteristics on Interface-Engineered High-Mobility $\hbox{HfO}_{2}$-Gated Ge pMOSFETs
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of band alignment between InAlAs and atomic-layer-deposited HfO2/Al2O3 by X-ray photoelectron spectroscopy;Applied Physics Express;2019-03-27
2. A 3D analytical modeling of tri-gate tunneling field-effect transistors;Journal of Computational Electronics;2016-06-23
3. Electrical properties of LaTiO high-k gate dielectric Ge MOS Capacitor and Ti content optimization;Acta Physica Sinica;2016
4. Interfacial and electrical characterization of HfO2/Al2O3/InAlAs structures;Japanese Journal of Applied Physics;2015-10-16
5. Hole Mobility Enhancement of GeSn/Ge pMOSFETs with an Interlayer Formed by Sn-Assisted Oxynitridation;ECS Solid State Letters;2014-09-16
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