Interfacial and electrical characterization of HfO2/Al2O3/InAlAs structures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/54/i=11/a=110303/pdf
Reference26 articles.
1. High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm
2. Structural and Electrical Characteristics of HfO2Films Fabricated by Pulsed Laser Deposition
3. Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz
4. Oxidation of InAlAs and Its Application to Gate Insulator of InAlAs/InGaAs Metal Oxide Semiconductor High Electron Mobility Transistor
5. Inversion-Mode Self-Aligned $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor With HfAlO Gate Dielectric and TaN Metal Gate
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of annealing temperature on interfacial and electrical performance of Au–Pt–Ti/HfAlO/InAlAs metal–oxide–semiconductor capacitor;Chinese Physics B;2020-08-01
2. Investigation of impact of gate underlap/overlap on the analog/RF performance of composite channel double gate MOSFETs;Journal of Vacuum Science & Technology B;2019-11
3. Anodic layer formation on the InAlAs surface in Townsend gas-discharge plasma;Materials Science in Semiconductor Processing;2019-11
4. Leakage Current Conduction Mechanism of Au-Pt-Ti/ HfO2-Al2O3/n-InAlAs Metal-Oxide-Semiconductor Capacitor under Reverse-Biased Condition;Coatings;2019-11-01
5. Свойства анодных слоев, сформированных на поверхности InAlAs(001) в таунсендовской газоразрядной плазме / Аксенов М.С., Валишева Н.А., Ковчавцев А.П., Гутаковский А.К.;Тезисы докладов XIV РОССИЙСКОЙ КОНФЕРЕНЦИИ ПО ФИЗИКЕ ПОЛУПРОВОДНИКОВ «ПОЛУПРОВОДНИКИ-2019»;2019-08-20
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