Electrical characteristics and short-channel effect ofc-axis aligned crystal indium gallium zinc oxide transistor with short channel length-Reference-Cited by-同舟云学术

Electrical characteristics and short-channel effect ofc-axis aligned crystal indium gallium zinc oxide transistor with short channel length

Published:2014-01-01 Issue:4S Volume:53 Page:04EF03
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kobayashi Yoshiyuki,Matsuda Shinpei,Matsubayashi Daisuke,Suzawa Hideomi,Sakakura Masayuki,Hanaoka Kazuya,Okazaki Yutaka,Yamamoto Tsutomu,Hondo Suguru,Hamada Takashi,Sasagawa Shinya,Nagai Masaharu,Hata Yuki,Maruyama Tetsunori,Yamamoto Yoshitaka,Yamazaki Shunpei

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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1. Spinel, YbFe2O4, and Yb2Fe3O7 types of structures for compounds in the In2O3 and Sc2O3A2O3BO systems [A: Fe, Ga, or Al; B: Mg, Mn, Fe, Ni, Cu, or Zn] at temperatures over 1000°C

2. Syntheses and Single-Crystal Data of Homologous Compounds, In2O3(ZnO)m (m = 3, 4, and 5), InGaO3(ZnO)3, and Ga2O3(ZnO)m (m = 7, 8, 9, and 16) in the In2O3-ZnGa2O4-ZnO System

3. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

4. Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films

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