Electrical properties of amorphous Zn–Sn–O thin films depending on composition and post-deposition annealing temperature near crystallization temperature-Reference-Cited by-同舟云学术

Electrical properties of amorphous Zn–Sn–O thin films depending on composition and post-deposition annealing temperature near crystallization temperature

Published:2023 Issue:24 Volume:11 Page:8254-8262
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Kim Whayoung¹²,Kang Sukin¹,Lee Yonghee¹,Mun Sahngik¹,Choi Jinheon¹,Lee Sunjin¹²,Hwang Cheol Seong¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea

2. SK Hynix Inc., Icheon, Gyeonggi-do 17336, Republic of Korea

Abstract

This study investigated the crystallization and electrical properties of atomic layer deposited Zn–Sn–O (ZTO) thin films. Sn 42 at% ZTO thin film showed the best thermal stability and electrical properties due to a change in the sub-gap states.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D2TC05090K

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