Enhanced charge storage performance in AlTi4Ox/Al2O3multilayer charge trapping memory devices-Reference-Cited by-同舟云学术

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Enhanced charge storage performance in AlTi4Ox/Al2O3multilayer charge trapping memory devices

Published:2014-07-07 Issue:8S3 Volume:53 Page:08NG02
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Gong Changjie,Ou Xin,Xu Bo,Lan Xuexin,Lei Yan,Lu Jianxin,Chen Yan,Yin Jiang,Xia Yidong,Liu Zhiguo,Li Aidong,Yan Feng

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/53/i=8S3/a=08NG02/pdf

Reference36 articles.

1. Fast and long retention-time nano-crystal memory

2. Integrated nanoelectronics for the future

3. On the go with SONOS

4. Overview of candidate device technologies for storage-class memory

5. Performance Improvement of SONOS Memory by Bandgap Engineering of Charge-Trapping Layer

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1. Improving Zr0.5Hf0.5O2-based charge-trapped performance by graphene oxide quantum dots;Functional Materials Letters;2019-01-21

2. Research on c-HfO2 (0 0 1)/α-Al2O3 (1 -1 0 2) interface in CTM devices based on first principle theory;AIP Advances;2017-12

3. A comparative study of charge trapping in HfO2/Al2O3 and ZrO2/Al2O3 based multilayered metal/high-k/oxide/Si structures;Thin Solid Films;2016-09

4. Identification of F+ centers in hafnia and zirconia nanopowders;Radiation Measurements;2016-07

5. Effect of substrate-enhanced and inhibited growth on atomic layer deposition and properties of aluminum–titanium oxide films;Thin Solid Films;2016-02

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