Single-common-gate triple-dot single-electron devices with side gate capacitances larger than the central one
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/53/i=9/a=094002/pdf
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2. Single-electron pumping in common-gate triple-dot devices with arbitrary asymmetric gate capacitance distributions;Journal of Computational Electronics;2020-08-02
3. Switching effects of spontaneously formed superlattices in relaxor ferroelectrics;Optical Materials Express;2019-09-17
4. Single-electron pumping in single-common-gate quadruple-dot devices with asymmetric gate capacitances;Japanese Journal of Applied Physics;2019-02-04
5. Anomalous single-electron transfer in common-gate quadruple-dot single-electron devices with asymmetric junction capacitances;Japanese Journal of Applied Physics;2018-04-27
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