High-quality AlN growth on 6H-SiC substrate using three dimensional nucleation by low-pressure hydride vapor phase epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference12 articles.
1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
2. High temperature growth of AlN film by LP-HVPE
3. Vibrational properties of AlN grown on (111)-oriented silicon
4. Threading dislocations in heteroepitaxial AlN layer grown by MOVPE on SiC (0001) substrate
5. High quality AlN grown on SiC by metal organic chemical vapor deposition
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