Importance of interface engineering for synthesis of SrHfO3perovskite thin films on Si substrates through crystallization of amorphous films and control of flat-band voltages of metal–oxide–semiconductor capacitors-Reference-Cited by-同舟云学术

Importance of interface engineering for synthesis of SrHfO3perovskite thin films on Si substrates through crystallization of amorphous films and control of flat-band voltages of metal–oxide–semiconductor capacitors

Published:2014-01-01 Issue:4S Volume:53 Page:04EA03
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Migita Shinji,Morita Yukinori,Masahara Meishoku,Ota Hiroyuki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference32 articles.

1. Permittivity increase of yttrium-doped HfO2 through structural phase transformation

2. Electrical and material characterizations of high-permittivity HfxTi1−xO2 gate insulators

3. Tetragonal Phase Stabilization by Doping as an Enabler of Thermally Stable HfO2 based MIM and MIS Capacitors for sub 50nm Deep Trench DRAM

4. Implementing cubic-phase HfO2 with κ-value ∼ 30 in low-VT replacement gate pMOS devices for improved EOT-Scaling and reliability

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