Author:
Maccioni Maria Barbara,Ricci Francesco,Fiorentini Vincenzo
Subject
General Physics and Astronomy,General Engineering
Cited by
19 articles.
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1. Molecular Beam Epitaxy of β-(InxGa1–x)2O3 on β-Ga2O3 (010): Compositional Control, Layer Quality, Anisotropic Strain Relaxation, and Prospects for Two-Dimensional Electron Gas Confinement;ACS Applied Materials & Interfaces;2024-02-29
2. A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3;Applied Physics Reviews;2022-03
3. Transport Mechanism of Enhanced Performance in an Amorphous/Monoclinic Mixed-Phase Ga2O3 Solar-Blind Deep Ultraviolet Photodetector;Crystals;2021-09-12
4. Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga)2O3 alloy films;Applied Physics Letters;2021-07-26
5. β-(AlxGa(1−x))2O3 epitaxial growth, doping and transport;Ultrawide Bandgap Semiconductors;2021