Abstract
Recently, as an emerging material, ultrawide bandgap Ga2O3 has been investigated extensively in solar-blind deep-ultraviolet (DUV) photodetectors (PDs). High sensitivity and signal-to-noise ratio of PDs are essential for the detection of solar-blind DUV signals; however, such factors are often not mutually compatible. In the present study, an amorphous/monoclinic homogeneous mixed-phase structure was demonstrated to be significantly beneficial in enhancing the comprehensive performance of Ga2O3 solar-blind DUV PDs, especially with respect to sensitivity and the signal-to-noise ratio. Further experimental and theoretical findings provide insights on the transport mechanism of enhanced performance in the mixed-phase Ga2O3 solar-blind DUV PD. For effectively separating the photogenerated carriers, a type-II band alignment between amorphous and crystalline Ga2O3 can be exploited. Furthermore, the change of the barrier height of the mixed-phase interface also has a significant impact on the transport properties of the mixed-phase Ga2O3 PD. Additionally, the potential applications of mixed-phase Ga2O3 PD in high-voltage corona discharge were explored, and clear and stable corona discharge signals were obtained. The results of the present study may promote understanding of DUV photoelectronic devices with various mixed-phase Ga2O3 materials and provide an efficient approach for promoting comprehensive performance in future solar-blind detection applications.
Funder
National Natural Science Foundation of China
Natural Science Foundation of Chongqing
Science and Technology Research Project of Chongqing Education Committee
Subject
Inorganic Chemistry,Condensed Matter Physics,General Materials Science,General Chemical Engineering
Cited by
6 articles.
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