Electrical properties of extended defects in 4H-SiC investigated by photoinduced current measurements
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/10/i=3/a=036601/pdf
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1. 10-kV, 123-m<tex>$Omega cdot $</tex>cm<tex>$^2$</tex>4H-SiC Power DMOSFETs
2. Silicon Carbide Microsystems for Harsh Environments
3. Degradation of hexagonal silicon-carbide-based bipolar devices
4. Structural and electronic characterization of (2,33) bar-shaped stacking fault in 4H-SiC epitaxial layers
5. Basal plane dislocation reduction for 8° off-cut, 4H-SiC using in situ variable temperature growth interruptions
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