Heteroepitaxy growth of GaAsBi on Ge(100) substrate by gas source molecular beam epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/9/i=4/a=045502/pdf
Reference26 articles.
1. Toward device-quality GaAs growth by molecular beam epitaxy on offcut Ge/Si[sub 1−x]Ge[sub x]/Si substrates
2. Growth of device-quality GaAs layer directly on (001) Ge substrates by both solid-source and gas-source MBE
3. Low-temperature GaAs films grown on Ge and Ge/SiGe/Si substrates
4. Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion
5. Scanning force microscopy studies of GaAs films grown on offcut Ge substrates
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1. Structural and optical properties of n-type and p-type GaAs(1−x)Bi x thin films grown by molecular beam epitaxy on (311)B GaAs substrates;Semiconductor Science and Technology;2021-06-21
2. Increasing Optical Efficiency in the Telecommunication Bands of Strain-Engineered Ga(As,Bi) Alloys;Physical Review Applied;2020-07-10
3. Atomic-Resolution EDX, HAADF, and EELS Study of GaAs1-xBix Alloys;Nanoscale Research Letters;2020-05-25
4. Raman spectroscopy of GaSb1−xBix alloys with high Bi content;Applied Physics Letters;2020-05-18
5. GaAs1-xBix growth on Ge: anti-phase domains, ordering, and exciton localization;Scientific Reports;2020-02-06
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