Electron microscopy analysis of microstructure of postannealed aluminum nitride template-Reference-Cited by-同舟云学术

Electron microscopy analysis of microstructure of postannealed aluminum nitride template

Published:2016-05-23 Issue:6 Volume:9 Page:065502
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Kaur Jesbains,Kuwano Noriyuki,Jamaludin Khairur Rijal,Mitsuhara Masatoshi,Saito Hikaru,Hata Satoshi,Suzuki Shuhei,Miyake Hideto,Hiramatsu Kazumasa,Fukuyama Hiroyuki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/9/i=6/a=065502/pdf

Reference27 articles.

1. A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode

2. 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

3. Defect structure in selectively grown GaN films with low threading dislocation density

4. Dislocation reduction in GaN thin films via lateral overgrowth from trenches

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