Impact of High‐Temperature Annealing on Boron Containing AlN Layers Grown by Metal Organic Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

Impact of High‐Temperature Annealing on Boron Containing AlN Layers Grown by Metal Organic Vapor Phase Epitaxy

Published:2020-07-21 Issue:16 Volume:217 Page:2000251
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Rettig Oliver¹^ORCID,Scholz Ferdinand¹,Li Yueliang²,Biskupek Johannes²,Kaiser Ute²,Hagedorn Sylvia³,Weyers Markus³,Müller Raphael⁴,Thonke Klaus⁴

Affiliation:

1. Institute of Functional NanosystemsUlm University Albert-Einstein-Allee 45 89081 Ulm Germany

2. Central Facility of Electron MicroscopyUlm University Albert-Einstein-Allee 11 89081 Ulm Germany

3. Ferdinand-Braun-InstitutLeibniz-Institut für Höchstfrequenztechnik Gustav-Kirchhoff-Str. 4 12489 Berlin Germany

4. Institute of Quantum Matter/Semiconductor Physics GroupUlm University Albert-Einstein-Allee 45 89081 Ulm Germany

Funder

Deutsche Forschungsgemeinschaft

Bundesministerium für Bildung und Forschung

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202000251

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4. Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron