Ultralow reverse leakage current in AlGaN/GaN lateral Schottky barrier diodes grown on bulk GaN substrate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/9/i=3/a=031001/pdf
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Unlocking the Potential of Hafnia Ferroelectrics: Achieving High Reliability via Plasma Frequency Modulation in Very High-Frequency Plasma-Enhanced Atomic Layer Deposition;ACS Applied Electronic Materials;2024-06-24
2. Admittance frequency dispersion in lateral AlGaN/GaN Schottky barrier diodes: Other origins of two Gp/ω peaks;Journal of Applied Physics;2023-02-24
3. Mechanism and enhancement of anti-parasitic-reaction catalytic activity of tungsten-carbide-coated graphite components for the growth of bulk GaN crystals;Applied Physics Express;2022-03-17
4. A simulation study of the impact of traps in the GaN substrate on the electrical characteristics of an AlGaN/GaN HEMT with a thin channel layer;Journal of Computational Electronics;2021-10-26
5. Vertical Schottky Contacts to Bulk GaN Single Crystals and Current Transport Mechanisms: A Review;Journal of Electronic Materials;2021-09-30
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