Composition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/6/i=12/a=121001/pdf
Reference26 articles.
1. When group-III nitrides go infrared: New properties and perspectives
2. Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates
3. Zur Elektronentheorie der Metalle. I
4. Determination of the band-gap energy of Al1−xInxN grown by metal–organic chemical-vapor deposition
5. Optical and structural characterization of AlInN layers for optoelectronic applications
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