Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots-Reference-Cited by-同舟云学术

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Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots

Published:1995-11-01 Issue:11A Volume:34 Page:L1439
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tackeuchi Atsushi,Nakata Yoshiaki,Muto Shunichi,Sugiyama Yoshihiro,Usuki Tatsuya,Nishikawa Yuji,Yokoyama Naoki,Osamu Wada Osamu Wada

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference15 articles.

1. Self-organized growth of strained InGaAs quantum disks

2. Optical properties of some III–V strained-layer superlattices

3. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs

4. Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs quantum dots

5. Highly uniform InGaAs/GaAs quantum dots (∼15 nm) by metalorganic chemical vapor deposition

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1. Temperature‐Dependent Exciton Dynamics in CdTe Quantum Dot Superlattices Fabricated via Layer‐by‐Layer Assembly;Advanced Optical Materials;2022-03-25

2. Lateral carrier transfer for high density InGaAs/GaAs surface quantum dots;Journal of Luminescence;2020-02

3. Temperature dependence of inter-dot electron-spin transfer among laterally coupled excited states in high-density InGaAs quantum dots;Journal of Applied Physics;2020-01-31

4. Carrier escape mechanism in laterally correlated InAs sub-monolayer quantum dots using temperature dependent photoluminescence;Journal of Luminescence;2019-11

5. Interdot carrier and spin dynamics in a two-dimensional high-density quantum-dot array of InGaAs with quantum dots embedded as local potential minima;Semiconductor Science and Technology;2019-01-07

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