Oxidation-induced majority and minority carrier traps in n- and p-type 4H-SiC
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/8/i=11/a=111301/pdf
Reference24 articles.
1. Status and prospects for SiC power MOSFETs
2. Material science and device physics in SiC technology for high-voltage power devices
3. Lifetime-limiting defects in n− 4H-SiC epilayers
4. Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation
5. Negative-USystem of Carbon Vacancy in4H-SiC
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1. Mapping the impact of defect distributions in silicon carbide devices using the edge transient-current technique;Applied Physics Letters;2023-05-01
2. Theory of shallow and deep boron defects in 4H -SiC;Physical Review B;2022-12-29
3. Cross‐Sectional Carrier Lifetime Profiling and Deep Level Monitoring in Silicon Carbide Films Exhibiting Variable Carbon Vacancy Concentrations;physica status solidi (a);2022-12-16
4. Majority and Minority Charge Carrier Traps in n-Type 4H-SiC Studied by Junction Spectroscopy Techniques;Electronic Materials;2022-03-14
5. Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC;Journal of Applied Physics;2022-01-21
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