III–V Semiconducting Nitrides: Physical Properties under Pressure-Reference-Cited by-同舟云学术

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III–V Semiconducting Nitrides: Physical Properties under Pressure

Published:1993-01-01 Issue:S1 Volume:32 Page:334
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Perlin P.,Gorczyca I.,Porowski S.,Suski T.,Christensen N. E.,Polian A.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Special role of indium nitride in the properties of related compounds and quantum structures;AIP Advances;2024-04-01

2. III-Nitride Polymorphs: XN (X=Al, Ga, In) in the Pnma Phase;Chemistry - A European Journal;2018-10-30

3. Effect of lattice strain on nanomaterials in energy applications: A perspective on experiment and theory;International Journal of Hydrogen Energy;2017-06

4. First-principle calculations of optical and phonon properties of wurtzite gallium nitride;AIP Conference Proceedings;2015

5. Gallium Nitride and Oxonitrides;Ceramics Science and Technology;2014-05-23

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