III-Nitride Polymorphs: XN (X=Al, Ga, In) in the Pnma Phase-Reference-Cited by-同舟云学术

III-Nitride Polymorphs: XN (X=Al, Ga, In) in the Pnma Phase

Published:2018-10-30 Issue:65 Volume:24 Page:17280-17287
ISSN:0947-6539
Container-title:Chemistry - A European Journal
language:en
Short-container-title:Chem. Eur. J.

Author:

Fan Qingyang¹^ORCID,Zhang Wenzhu¹,Yun Sining²,Xu Jie¹,Song Yanxing³

Affiliation:

1. School of Information and Control Engineering; Xi'an University of Architecture and Technology; Xi'an 710055 P. R. China

2. Functional Materials Laboratory (FML); School of Materials & Mineral Resources; Xi'an University of Architecture and Technology; Xi'an 710055 P. R. China

3. School of Microelectronics; Xidian University; Xi'an 710071 P. R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

General Chemistry,Catalysis,Organic Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/chem.201803202/fullpdf

Reference53 articles.

1. Theoretical study of BN, BP, and BAs at high pressures

2. Theoretical study of the relative stability of structural phases in group-III nitrides at high pressures

3. Raman scattering and x-ray-absorption spectroscopy in gallium nitride under high pressure

4. III–V Semiconducting Nitrides: Physical Properties under Pressure

5. Stability of the wurtzite-type structure under high pressure: GaN and InN

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