Detailed study of effects of duration of pre-AlN-growth trimethylaluminum step on morphologies of GaN layers grown on silicon substrate by metal organic chemical vapor deposition-Reference-Cited by-同舟云学术

Detailed study of effects of duration of pre-AlN-growth trimethylaluminum step on morphologies of GaN layers grown on silicon substrate by metal organic chemical vapor deposition

Published:2018-08-03 Issue:9 Volume:57 Page:091001
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Matsumoto Koji^ORCID,Ono Toshiaki,Honda Yoshio,Murakami Satoshi,Kushimoto Maki,Amano Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=9/a=091001/pdf

Reference31 articles.

1. 20 mΩ, 750 V High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate

2. Growth of high-quality InGaN/GaN LED structures on (111) Si substrates with internal quantum efficiency exceeding 50%

3. Gallium nitride devices for power electronic applications

4. GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

5. Growth of GaN/AlGaN on 200 mm diameter silicon (111) wafers by MOCVD

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of TMAl predose time on the quality of submicron-thick GaN on Si;Vacuum;2024-08

2. Influence of the lattice parameter of the AlN buffer layer on the stress state of GaN film grown on (111) Si;Chinese Physics B;2023-01-01

3. Low RF loss and low dislocation density of GaN grown on high-resistivity Si substrates;Applied Physics Express;2022-02-16

4. Comparison of the AlN and GaN crystalline quality on 2-inch silicon substrate via two growth methods;Journal of Crystal Growth;2020-04

5. Longitudinal optical Raman mode A1 to calculate the indium molar fraction of epitaxial InGaN layers grown by LP-MOCVD on polar and non-polar planes;Journal of Materials Science: Materials in Electronics;2020-01-31