Effect of N bonding structure in AlON deposited by plasma-assisted atomic layer deposition on electrical properties of 4H-SiC MOS capacitor-Reference-Cited by-同舟云学术

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Effect of N bonding structure in AlON deposited by plasma-assisted atomic layer deposition on electrical properties of 4H-SiC MOS capacitor

Published:2017-12-18 Issue:1S Volume:57 Page:01AE06
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Takeuchi Wakana,Yamamoto Kensaku,Sakashita Mitsuo,Nakatsuka Osamu,Zaima Sigeaki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=1S/a=01AE06/pdf

Reference30 articles.

1. Status and prospects for SiC power MOSFETs

2. A roadmap for future wide bandgap semiconductor power electronics

3. Material science and device physics in SiC technology for high-voltage power devices

4. Annealing of Al2O3thin films prepared by atomic layer deposition

5. Electronic and optical properties of Al2O3/SiO2thin films grown on Si substrate

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Subcircuit-Based Model for the Accumulation-Mode MOS Capacitor;Journal of Circuits, Systems and Computers;2022-09-24

2. Influence of phosphorus diffusion on the SiO2/4H-SiC (0001) interface during poly gate formation process;Microelectronics Reliability;2021-11

3. Fermi-level pinning at metal/4H-SiC contact induced by SiC x O y interlayer;Japanese Journal of Applied Physics;2020-02-28

4. The composition and interfacial properties of annealed AlN films deposited on 4H-SiC by atomic layer deposition;Materials Science in Semiconductor Processing;2019-05

5. Annealing behavior of open spaces in AlON films studied by monoenergetic positron beams;Applied Physics Letters;2018-04-30

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