Performance of four-terminal low-temperature polycrystalline-silicon thin-film transistors and their application in CMOS inverters on glass substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=3S1/a=03DB01/pdf
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4. Ge GAA FETs and TMD FinFETs for the Applications Beyond Si—A Review
5. Lasing in direct-bandgap GeSn alloy grown on Si
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1. Four-terminal polycrystalline-silicon vertical thin-film transistors on glass substrates;Japanese Journal of Applied Physics;2024-04-01
2. Poly-Si Thin-Film Transistors with N-Type Line-Array Doping Channels Fabricated by Nanoimprint Lithography;ECS Journal of Solid State Science and Technology;2019
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