Excellent wet etching technique using pulsed anodic oxidation for homoepitaxially grown GaN layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=8/a=086502/pdf
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1. Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device
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