Effect of low-oxygen-concentration layer on iron gettering capability of carbon-cluster ion-implanted Si wafer for CMOS image sensors-Reference-Cited by-同舟云学术

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Effect of low-oxygen-concentration layer on iron gettering capability of carbon-cluster ion-implanted Si wafer for CMOS image sensors

Published:2018-01-15 Issue:2 Volume:57 Page:021304
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Onaka-Masada Ayumi,Nakai Toshiro,Okuyama Ryosuke,Okuda Hidehiko,Kadono Takeshi,Hirose Ryo,Koga Yoshihiro,Kurita Kazunari,Sueoka Koji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=2/a=021304/pdf

Reference35 articles.

1. Transition metals in silicon

2. Electric field effect on the thermal emission of traps in semiconductor junctions

3. Leakage current modeling of test structures for characterization of dark current in CMOS image sensors

4. Study of Metal Contamination in CMOS Image Sensors by Dark-Current and Deep-Level Transient Spectroscopies

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1. Hydrogen Termination Effect on SiO₂/Si Interface State Density in CH₃O-Molecular-Ion-Implanted Silicon Epitaxial Wafer for CMOS Image Sensors;ECS Journal of Solid State Science and Technology;2024-01-01

2. Thermal Shrinkage Behavior of CH₃O-Multielement-Molecular-Ion-Implantation-Induced Dislocation Loops Studied by Real-Time Transmission Electron Microscopy Observation;Journal of The Electrochemical Society;2023-04-01

3. Reduction of White Spot Defects in CMOS Image Sensors Fabricated Using Epitaxial Silicon Wafer with Proximity Gettering Sinks by CH2P Molecular Ion Implantation;Sensors;2022-10-28

4. Dissociation Kinetics of Trapped Hydrogen in High-dose Hydrocarbon-Molecular-Ion-Implanted Silicon during Rapid Thermal Annealing;e-Journal of Surface Science and Nanotechnology;2022-06-30

5. In Situ Transmission Electron Microscopy Study of Shrinkage Kinetics of CH₄N-Molecular-Ion-Implantation-Induced Extended Defects;Journal of The Electrochemical Society;2022-04-01

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