Study of Metal Contamination in CMOS Image Sensors by Dark-Current and Deep-Level Transient Spectroscopies-Reference-Cited by-同舟云学术

Study of Metal Contamination in CMOS Image Sensors by Dark-Current and Deep-Level Transient Spectroscopies

Published:2010-04-20 Issue:6 Volume:39 Page:625-629
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Domengie F.,Regolini J. L.,Bauza D.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-010-1212-6.pdf

Reference23 articles.

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2. A. El Gamal and H. Eltoukhy, IEEE Circuit. Dev. 21, 6 (2005).

3. K. Tokashiki, K. Bai, K. Baek, Y. Kim, G. Min, C. Kang, H. Cho, and J. Moon, Thin Solid Films 515, 4864 (2007).

4. Y. Kunimi and B. Pain, Proceedings of the 2007 International Image Sensor Workshop, Ogunquit Maine, USA, June 7–10, 2007, p. 66.

5. E. Colelli, A. Galbiati, D. Caputo, M.L. Polignano, V. Soncini, and G. Salva, Proceedings of the 8th International Symposium on Plasma and Process Induced Damage, Corbeil-Essonnes, France, April 24–25, 2003, p. 81.

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