Dependences of deposition rate and OH content on concentration of added trichloroethylene in low-temperature silicon oxide films deposited using silicone oil and ozone gas-Reference-Cited by-同舟云学术

Dependences of deposition rate and OH content on concentration of added trichloroethylene in low-temperature silicon oxide films deposited using silicone oil and ozone gas

Published:2018-01-23 Issue:3S1 Volume:57 Page:03DA02
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Horita Susumu,Jain Puneet

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=3S1/a=03DA02/pdf

Reference35 articles.

1. Low-Temperature Formation of Device-Quality SiO2/Si Interfaces Using Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition

2. Single-wafer integrated semiconductor device processing

3. TEOS-PECVD system for high growth rate deposition of SiO2 films

4. Characteristics of Plasma-Enhanced-Chemical-Vapor-Deposition Tetraethylorthosilicate Oxide and Thin-Film-Transistor Application

5. Thermal Desorption and Infrared Studies of Plasma-Enhanced Chemical Vapor Deposited SiO Films with Tetraethylorthosilicate

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