Effect of Added Ethanol or Water Vapor in NH3 Gas Annealing on Reduction of Residual OH Groups at < 200 °C in Si Oxide Films
Author:
Affiliation:
1. Japan Adv. Inst. Sci. & Tech. (JAIST),Ishikawa,Japan,923-1292
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10615256/10615275/10615919.pdf?arnumber=10615919
Reference6 articles.
1. Low-Temperature Formation of Device-Quality SiO2/Si Interfaces Using Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition
2. Single-wafer integrated semiconductor device processing
3. Low-Temperature Deposition of Silicon Oxide Film from the Reaction of Silicone Oil Vapor and Ozone Gas
4. Highly effective removal of OH bonds in low-temperature silicon oxide films by annealing with ammonia gas at a low temperature of 175 °C
5. Microcalorimetric, FTIR, and DFT Studies of the Adsorption of Methanol, Ethanol, and 2,2,2-Trifluoroethanol on Silica
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