Metalorganic vapor phase epitaxial growth of AlGaN directly on reactive-ion etching-treated GaN surfaces to prepare AlGaN/GaN heterostructures with high electron mobility (∼1500 cm2 V−1 s−1): Impacts of reactive-ion etching-damaged layer removal
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=12/a=125501/pdf
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1. Figures of merit in high-frequency and high-power GaN HEMTs
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