Experimental Observation of Quantum Confinement Effect in <110> and <100> Silicon Nanowire Field-Effect Transistors and Single-Electron/Hole Transistors Operating at Room Temperature-Reference-Cited by-同舟云学术

Experimental Observation of Quantum Confinement Effect in <110> and <100> Silicon Nanowire Field-Effect Transistors and Single-Electron/Hole Transistors Operating at Room Temperature

Published:2013-10-01 Issue:10R Volume:52 Page:104001
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Suzuki Ryota,Nozue Motoki,Saraya Takuya,Hiramoto Toshiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference43 articles.

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5. Observation of quantum effects and Coulomb blockade in silicon quantum‐dot transistors at temperatures over 100 K

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