Impact of Source/Drain Junction and Cell Shape on Random Telegraph Noise in NAND Flash Memory
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference31 articles.
1. Giant Random Telegraph Signals in Nanoscale Floating-Gate Devices
2. Discrete Dopant Effects on Statistical Variation of Random Telegraph Signal Magnitude
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Random Telegraph Noise in Flash Memories;Noise in Nanoscale Semiconductor Devices;2020
2. RTS in memory and imager circuits;Random Telegraph Signals in Semiconductor Devices;2017
3. Characterization of the charge trapping properties in p-channel silicon–oxide–nitride–oxide–silicon memory devices including SiO2/Si3N4 interfacial transition layer;Japanese Journal of Applied Physics;2015-09-03
4. Modeling ofΔIBLdue to random telegraph noise with considering bit-line interference in NAND flash memory;Semiconductor Science and Technology;2014-11-13
5. Developments in 3D-NAND Flash technology;Advances in Non-volatile Memory and Storage Technology;2014
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