Author:
Aoki Masahiko,Kawanowa Hitoshi,Feng Gan,Kimoto Tsunenobu
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
12 articles.
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1. Revisiting stacking fault identification based on the characteristic photoluminescence emission wavelengths of silicon carbide epitaxial wafers;Materials Science in Semiconductor Processing;2024-06
2. Observation of broad triangular Frank-type stacking faults and characterization of stacking faults with emission wavelengths below 430 nm in 4H–SiC epitaxial layers;Applied Physics Letters;2024-04-08
3. Characterization of partial dislocations for (3, 3, 4), (3, 3, 3, 3), and (3, 3, 2, 2, 4) stacking faults in 4H-SiC crystals;Journal of Crystal Growth;2023-12
4. Optoelectronic and structural characterization of trapezoidal defects in 4H-SiC epilayers and the effect on MOSFET reliability;Journal of Applied Physics;2023-08-18
5. Photoluminescence wavelength from stacking fault with complicated structure in 4H-SiC epitaxial layer;Japanese Journal of Applied Physics;2022-09-27