Highly Selective Etching of SiO2over Si3N4and Si in Capacitively Coupled Plasma Employing C5HF7Gas-Reference-Cited by-同舟云学术

Highly Selective Etching of SiO2over Si3N4and Si in Capacitively Coupled Plasma Employing C5HF7Gas

Published:2013-01-01 Issue:1R Volume:52 Page:016201
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Miyawaki Yudai,Kondo Yusuke,Sekine Makoto,Ishikawa Kenji,Hayashi Toshio,Takeda Keigo,Kondo Hiroki,Yamazaki Atsuyo,Ito Azumi,Matsumoto Hirokazu,Hori Masaru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference35 articles.

1. Some Chemical Aspects of the Fluorocarbon Plasma Etching of Silicon and Its Compounds

2. Plasma etching—A discussion of mechanisms

3. In situ Auger electron spectroscopy of Si and SiO2 surfaces plasma etched in CF4-H2 glow discharges

4. Selective Etching of Silicon Dioxide Using Reactive Ion Etching with CF 4 ‐ H 2

5. Chemical sputtering of fluorinated silicon

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