Formation of Semi-Insulating Layers on Semiconducting β-Ga2O3Single Crystals by Thermal Oxidation-Reference-Cited by-同舟云学术

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Formation of Semi-Insulating Layers on Semiconducting β-Ga2O3Single Crystals by Thermal Oxidation

Published:2013-05-01 Issue:5R Volume:52 Page:051101
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Oshima Takayoshi,Kaminaga Kenichi,Mukai Akira,Sasaki Kohei,Masui Takekazu,Kuramata Akito,Yamakoshi Shigenobu,Fujita Shizuo,Ohtomo Akira

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference39 articles.

1. Wide bandgap semiconductor materials and devices

2. Crystal Structure of β‐Ga2O3

3. A Reinvestigation of β-Gallium Oxide

4. Absorption and Reflection of Vapor Grown Single Crystal Platelets of β-Ga2O3

5. Anisotropy of electrical and optical properties in β-Ga2O3 single crystals

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1. First-principles investigations and MOCVD growth of Si-doped β-Ga2O3 thin films on sapphire substrates for enhancing Schottky barrier diode characteristics;Materials Science in Semiconductor Processing;2024-08

2. Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in β-Ga2O3;APL Materials;2024-08-01

3. Enhancement of device performance in β-Ga2O3 Schottky barrier diodes with tetramethylammonium hydroxide treatment;Colloids and Surfaces A: Physicochemical and Engineering Aspects;2024-07

4. Recent progresses in thermal treatment of β-Ga2O3 single crystals and devices;International Journal of Minerals, Metallurgy and Materials;2024-05-28

5. Etching-free pixel definition in InGaN green micro-LEDs;Light: Science & Applications;2024-05-24

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