Local atomic structure analysis of SiC interface with oxide using chemical-state-selective X-ray absorption spectroscopy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/9/i=10/a=101301/pdf
Reference27 articles.
1. Metal–oxide–semiconductor capacitors formed by oxidation of polycrystalline silicon on SiC
2. Interface trap profile near the band edges at the 4H-SiC/SiO2 interface
3. Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and (11\bar20) Formed by N2O Oxidation
4. Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide
5. Behavior of nitrogen atoms in SiC-SiO2 interfaces studied by electrically detected magnetic resonance
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2. Atomic and electronic properties of different types of SiC/SiO2 interfaces: First-principles calculations;Surfaces and Interfaces;2022-10
3. Experimental and theoretical studies on atomic structures of the interface states at SiO2/4H-SiC(0001) interface;Journal of Applied Physics;2022-06-07
4. Atomic Structures and Interface States Density at SiO2/4H-SiC Interface;Vacuum and Surface Science;2021-07-10
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