Anisotropy effects on the performance of wurtzite GaN impact-ionization-avalanche-transit-time diodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/9/i=11/a=111004/pdf
Reference22 articles.
1. Comparative study on the high-bandgap material (GaN and SiC)-based impact avalanche transit time device
2. Monte Carlo investigation of current voltage and avalanche noise in GaN double-drift impact diodes
3. Time and real space dependence of impact ionization events in low noise impact avalanche transit time diodes
4. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
5. Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN
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