Monte Carlo investigation of current voltage and avalanche noise in GaN double-drift impact diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1853498
Reference32 articles.
1. Two-terminal millimeter-wave sources
2. 200 GHz pulsed GaAs-IMPATT diodes
3. DC and high-frequency characteristics of GaN-based IMPATTs
4. Monte Carlo study of hot-carrier transport in bulk wurtzite GaN and modeling of a near-terahertz impact avalanche transit time diode
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2. Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz;IEEE Electron Device Letters;2023-08
3. Noise characteristics of Ni/GaN Schottky barrier IMPATT diode based on polar- and nonpolar-oriented wurtzite GaN for terahertz application;Superlattices and Microstructures;2020-03
4. Improved performance of Ni/GaN Schottky barrier impact ionization avalanche transit time diode with n-type GaN deep level defects;Semiconductor Science and Technology;2020-02-01
5. GaN/AlxGa1−xN/GaN heterostructure IMPATT diode for D-band applications;Applied Physics A;2019-02-23
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