Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4747466
Reference34 articles.
1. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys
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4. Present Status of InGaN-Based Laser Diodes
5. Design and characterization of GaN∕InGaN solar cells
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