Funder
National Natural Science Foundation of China
Subject
General Physics and Astronomy,General Engineering
Cited by
8 articles.
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1. Advanced Down-Scaling Technology and its Physical Mechanism for 515 GHz GaN HEMT;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
2. Demonstration of 420GHz highly scaled InAlN/GaN HEMTs by Electron Beam Lithography;2023 International Workshop on Advanced Patterning Solutions (IWAPS);2023-10-26
3. Scaled InAlN/GaN HEMT on Sapphire With fT/fmax of 190/301 GHz;IEEE Transactions on Electron Devices;2023-06
4. Terahertz Wireless Communication Systems;Antenna Technology for Terahertz Wireless Communication;2023
5. TiO2 insertion layer deposited before passivation to reduce etch damage on AlGaN/GaN HEMT;Japanese Journal of Applied Physics;2022-07-22