Defects reduction ina-plane AlGaN epi-layers grown onr-plane sapphire substrates by metal organic chemical vapor deposition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/10/i=1/a=011002/pdf
Reference26 articles.
1. Quantum-Confined Stark Effect in an AlGaN/GaN/AlGaN Single Quantum Well Structure
2. Deep-ultraviolet light emission properties of nonpolar M-plane AlGaN quantum wells
3. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
4. High-resolution X-ray diffraction investigations of the microstructure of MOVPE grown a-plane AlGaN epilayers
5. Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
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