Driving force of oxygen-ion migration across high-k/SiO2 interface
Author:
Funder
Japan Society for the Promotion of Science
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/10/i=3/a=031501/pdf
Reference31 articles.
1. Study of La-Induced Flat Band Voltage Shift in Metal/HfLaOx/SiO2/Si Capacitors
2. Comprehensive Study of VFB Shift in High-k CMOS - Dipole Formation, Fermi-level Pinning and Oxygen Vacancy Effect
3. Counter Dipole Layer Formation in Multilayer High-$k$ Gate Stacks
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