Current collapse in high-Al channel AlGaN HFETs
Author:
Funder
National Science Foundation
DARPA DREAM contract
ARO contract
University of South Carolina
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://iopscience.iop.org/article/10.7567/1882-0786/ab24b1/pdf
Reference32 articles.
1. Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric
2. Drain current compression in GaN MODFETs under large-signal modulation at microwave frequencies
3. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
4. Trapping effects in GaN and SiC microwave FETs
5. 600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse
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1. Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility;Advanced Electronic Materials;2024-06-18
2. A review on GaN HEMTs: nonlinear mechanisms and improvement methods;Journal of Semiconductors;2023-12-01
3. Breakdown Voltage Enhancement of Al0.1Ga0.9 N Channel HEMT with Recessed Floating Field Plate;Silicon;2021-09-13
4. Au-Free Al₀.₄Ga₀.₆N/Al₀.₁Ga₀.₉N HEMTs on Silicon Substrate With High Reverse Blocking Voltage of 2 kV;IEEE Transactions on Electron Devices;2021-09
5. An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs;IEEE Access;2021
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