High performance anatase-TiO2 thin film transistors with a two-step oxidized TiO2 channel and plasma enhanced atomic layer-deposited ZrO2 gate dielectric-Reference-Cited by-同舟云学术

High performance anatase-TiO2 thin film transistors with a two-step oxidized TiO2 channel and plasma enhanced atomic layer-deposited ZrO2 gate dielectric

Published:2019-08-07 Issue:9 Volume:12 Page:096502
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Zhang Jie,Cui Peng,Lin Guangyang^ORCID,Zhang Yuying,Sales Maria Gabriela,Jia Meng,Li Zhengxin,Goodwin Christopher,Beebe Thomas,Gundlach Lars,Ni Chaoying,McDonnell Stephen,Zeng Yuping

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://iopscience.iop.org/article/10.7567/1882-0786/ab3690/pdf

Reference22 articles.

1. Photoelectrochemical cells

2. Resistive Random Access Memory (ReRAM) Based on Metal Oxides

3. One Volt Organic Transistor

4. Field-effect transistor based on atomically flat rutile TiO2

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