High-performance lateral GaN Schottky barrier diode on silicon substrate with low turn-on voltage of 0.31 V, high breakdown voltage of 2.65 kV and high-power figure-of-merit of 2.65 GW cm−2-Reference-Cited by-同舟云学术

High-performance lateral GaN Schottky barrier diode on silicon substrate with low turn-on voltage of 0.31 V, high breakdown voltage of 2.65 kV and high-power figure-of-merit of 2.65 GW cm−2

Published:2019-03-19 Issue:4 Volume:12 Page:046502
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Zhang Tao,Zhang Jincheng,Zhou Hong,Zhang Yachao,Chen Tangsheng,Zhang Kai,Wang Yi,Dang Kui,Bian Zhaoke,Duan Xiaoling,Ning Jing,Zhao Shenglei,Hao Yue

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://iopscience.iop.org/article/10.7567/1882-0786/ab0712/pdf

Reference32 articles.

1. High-Performance InAlN/GaN MOSHEMTs Enabled by Atomic Layer Epitaxy MgCaO as Gate Dielectric

2. Investigation on Carrier Transport Through AlN Nucleation Layer From Differently Doped Si(111) Substrates

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