Ultrathin inserted AlGaN/InAlN heterojunction for performance improvement in AlGaN-based deep ultraviolet light-emitting diodes
Author:
Funder
Japan Society for the Promotion of Science
Japan Science and Technology Agency
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/12/i=1/a=011010/pdf
Reference28 articles.
1. Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power
2. Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes
3. AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
4. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
5. 150 mW deep-ultraviolet light-emitting diodes with large-area AlN nanophotonic light-extraction structure emitting at 265 nm
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