Monitoring of Ga-Na melt electrical resistance and its correlation with crystal growth on the Na Flux method
Author:
Funder
Japan Science and Technology Agency
Ministry of the Environment
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://iopscience.iop.org/article/10.7567/1882-0786/ab1fc3/pdf
Reference25 articles.
1. Growth of SiC bulk crystals for application in power electronic devices - process design, 2D and 3D X-ray in situ visualization and advanced doping
2. In situ monitoring of crystal growth by reflectance difference spectroscopy
3. Coalescence Growth of Dislocation-Free GaN Crystals by the Na-Flux Method
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1. Suppression of polycrystal nucleation by methane addition at moderate timing to maintain GaN crystal growth on point seeds in the Na-flux method;Journal of Crystal Growth;2024-02
2. Monitoring of GaN crystal growth rate in the Na flux growth via electroresistometry of Ga-Na solution;Journal of Crystal Growth;2023-09
3. Temperature dependence of nitrogen dissolution on Na flux growth;Journal of Crystal Growth;2020-04
4. Fabrication of a 1.5-inch freestanding GaN substrate by selective dissolution of sapphire using Li after the Na-flux growth;Journal of Crystal Growth;2020-03
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