Coalescence Growth of Dislocation-Free GaN Crystals by the Na-Flux Method-Reference-Cited by-同舟云学术

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Coalescence Growth of Dislocation-Free GaN Crystals by the Na-Flux Method

Published:2012-08-23 Issue:9 Volume:5 Page:095501
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Imanishi Masayuki,Murakami Kosuke,Imabayashi Hiroki,Takazawa Hideo,Todoroki Yuma,Matsuo Daisuke,Maruyama Mihoko,Imade Mamoru,Yoshimura Masashi,Mori Yusuke

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/5/i=9/a=095501/pdf

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Solution Height on the Growth of GaN Crystals in the Na-Flux Liquid-Phase Method;Crystal Growth & Design;2024-04-01

2. Research Progress in Liquid Phase Growth of GaN Crystals;Chemistry – A European Journal;2024-01-12

3. Prospective view of nitride material synthesis;International Journal of Ceramic Engineering & Science;2023-07-27

4. The effect of lateral growth of self-assembled GaN microdisks on UV lasing action;Nano Research;2023-07-18

5. Yellow-Green Luminescence Due to Polarity-Dependent Incorporation of Carbon Impurities in Self-Assembled GaN Microdisk;Nano Letters;2022-10-18

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